دانلود کتاب،مقاله،جزوه و نرم افزار مهندسی مواد

کلیه منابع مورد نیاز دانشجویان و مهندسین مواد (متالورژی ، سرامیک ، جوش ، خوردگی ، نانو و بایومواد)

دانلود کتاب،مقاله،جزوه و نرم افزار مهندسی مواد

کلیه منابع مورد نیاز دانشجویان و مهندسین مواد (متالورژی ، سرامیک ، جوش ، خوردگی ، نانو و بایومواد)

اثر زیرلایه روی جوانه زنی و رشد نانو ورق های عمودی گرافن

Influence of substrate on nucleation and growth of

verticalgraphene nanosheets

اثر زیرلایه روی جوانه زنی و رشد نانو ورق های عمودی گرافن

ABSTRACT

The present study reports the role of substrate on nucleation and growth of vertical graphene nanosheets (VGNs) under electron cyclotron resonance chemical vapor deposition (ECR-CVD). The VGNs are grown on Pt, Ni, Au, Cu, Si(100), Si(111), SiO2 and quartz substrates simultaneously. The morphology of VGNs is found to vary significantly with substrate. VGNs on Pt have the highest aerial density of vertical sheets while quartz have the lowest. The structural defects in VGNs vary with substrate as evidenced from Raman spectroscopy. The observation of defect related Raman bands such as D'' and D* at 1150 and 1500 cm-1, respectively revealed the existence of pentagon-heptagon rings or carbon onions in VGNs. Formation of such defects at early stage of nucleation dictates the growth mechanism and hence the morphology. A phenomenological four stage model is discussed, to substantiate the nucleation and growth mechanism of VGNs on different substrates, by evoking substrate - plasma interaction during growth.


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شناسایی ساختار و انتقال بار لایه های گرافن

Structural and charge transport characteristics of graphene layers

obtained from CVD thin film and bulk graphite materials

شناسایی ساختار و انتقال بار لایه های گرافن حاصل از لایه نازک CVD و مواد گرافیتی

 

ABSTRACT


We report an experimental comparative study of graphene layers produced by micromechanical cleavage of bulk graphite materials of different origins and graphite films obtained by plasma enhanced chemical vapor deposition (PECVD). Structural characteristics of these materials were evaluated using Raman spectroscopy and electron microscopy. Field effect transistors (FETs) based on the PECVD graphene were produced using electron beam lithography. Conductivity, carrier mobility and other characteristics of the PECVD graphene obtained from Raman and FET tests were similar to the properties of graphene flakes obtained from bulk graphite materials. Taking into account the scalability of the CVD fabrication, these results confirm the possible industrial use of graphene films obtained by this method.

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