تک کریستال Si تشکیل شده روی لایه آمورف در دمای پایین

Single-crystal Si formed on amorphous substrate at

low temperature by nanopatterning and

nickel-induced lateral crystallization

تک کریستال Si تشکیل شده روی لایه آمورف در دمای پایین

ABSTRACT

Silicon-based thin film transistors ~TFTs! on an amor- phous substrate have many important applications, including active matrix liquid-crystal display ~AMLCD! and future 3-dimensional ~3D! integrated circuits. However, silicon films deposited on amorphous substrate are typically in amorphous, microcrystalline, or polycrystalline states, which contain tremendous intrinsic defects, resulting in poor device performance and device-to-device nonuniformity. A single- crystal silicon film on amorphous substrate is highly desired but is difficult to achieve because single-crystal silicon can- not grow epitaxially on an amorphous substrate. Low tem- perature is also desired to lower the manufacturing cost and ensure the circuit integration.