سلول های خورشیدی از تک کریستال های Si تا مواد متخلخل

A review on solar cells from Si-single crystals

to porous materials and quantum dots

مروری بر سلول های خورشیدی از تک کریستال های Si تا نقاط کوانتومی و مواد متخلخل

ABSTRACT

Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. 

 

تک کریستال Si تشکیل شده روی لایه آمورف در دمای پایین

Single-crystal Si formed on amorphous substrate at

low temperature by nanopatterning and

nickel-induced lateral crystallization

تک کریستال Si تشکیل شده روی لایه آمورف در دمای پایین

ABSTRACT

Silicon-based thin film transistors ~TFTs! on an amor- phous substrate have many important applications, including active matrix liquid-crystal display ~AMLCD! and future 3-dimensional ~3D! integrated circuits. However, silicon films deposited on amorphous substrate are typically in amorphous, microcrystalline, or polycrystalline states, which contain tremendous intrinsic defects, resulting in poor device performance and device-to-device nonuniformity. A single- crystal silicon film on amorphous substrate is highly desired but is difficult to achieve because single-crystal silicon can- not grow epitaxially on an amorphous substrate. Low tem- perature is also desired to lower the manufacturing cost and ensure the circuit integration.