خواص لایه های رسوب نشانی شده CdTe به روش تبخیر باریکه الکترونی

Properties of CdTe films deposited by

electron beam evaporation

خواص لایه های رسوب نشانی شده  CdTe به روش تبخیر باریکه الکترونی 

ABSTRACT

Cadmium telluride thin films were prepared by electron beam evaporation on glass substrates kept at different temperatures in the range 30 - 300 °C. The films were characterized by X-ray diffraction, scanning electron microscopy and optical absorption measurements. The conductivity of the films was measured in the temperature range 100 - 300 K. While the low temperature data (100 - 200 K) could be explained by the variable range hopping process, the high temperature data (200 - 300 K) could be explained on the basis of Seto's model for thermionic emission of the carriers over the grain boundaries. Transmission spectra have indicated a direct band gap around 1.55 eV.