بررسی مشخصه AFM موانع نفوذی پایه Ta

AFM Characterization of Ta-based Diffusion Barriers for Use in Future Semiconductor Metallization

بررسی مشخصه AFM موانع نفوذی پایه Ta برای استفاده در متالورژیکی نیمه هادی­های آینده

ABSTRACT

In this paper the investigation of r.f.-sputter-deposited Ta, Ta-N and Ta-N-O thin Ðlms is presented. Using atomic force microscopy in combination with sheet resistance measurements, Auger electron spectroscopy and x-ray diffraction, the thin Ðlm properties and microstructure are examined. Two crystalline modiÐcations of Ta (tetragonal b-Ta and bcc a-Ta) are reported. By incorporation of nitrogen and/or oxygen into the Ta Ðlms, nanocrystalline and quasi-amorphous structures can be achieved. Finally, the usefulness of the Ðlms as di†usion barriers in Cu-based metallization systems is described. ( 1997 by John Wiley & Sons, Ltd.