روش جدید سنتز لایه های نازک ZnO: ریزساختار، خواص الکتریکی و اپتیکی

New process for synthesis of ZnO thin films: Microstructural, optical

and electrical characterization

روش جدید سنتز لایه های نازک ZnO: ریزساختار، خواص الکتریکی و اپتیکی

ABSTRACT

Zinc oxide (ZnO) is an interesting wide-band-gap semiconductor material with a direct band gap of 3.36 eV [1] at room temperature and exciton binding energy of 60 meV. It has crystalline structure of the wurtzite type and the unit cell with the constants a = 3.24 ˚A and c = 5.19A˚ . Thin films of ZnO are utilized for a wide variety of electronic and opto-electronic applications, such as surface acoustic wave devices [4], transparent conducting electrodes [2], heat mirrors [3]. Nanoscale porous structures of ZnO with a high surface area find their application in chemical sensors [5] and dye-sensitised solar cells [6]. Various techniques have been used to deposit undoped and doped ZnO films on different substrates, including spray pyrolysis [7], organometallic chemical vapor deposition [8], pulsed laser deposition [9], sputtering [10], and sol–gel process [11].